Energy-dispersive X-ray reflectivity and GID for real-time growth studies of pentacene thin films
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chair:
Kowarik, S. / Gerlach, A. / Leitenberger, W. / Hu, J. / Witte, G. / Wöll, Ch. / Pietsch, U. / Schreiber, F. (2007)
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place:
Thin Solid Films (2007), 515, 5606-5610
- Date: 2007
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Kowarik, S. / Gerlach, A. / Leitenberger, W. / Hu, J. / Witte, G. / Wöll, Ch. / Pietsch, U. / Schreiber, F. (2007): "Energy-dispersive X-ray reflectivity and GID for real-time growth studies of pentacene thin films". In: Thin Solid Films (2007), 515, 5606-5610
Abstract
We use energy-dispersive X-ray reflectivity and grazing incidence diffraction (GID) to follow the growth of the crystalline organic semiconductor pentacene on silicon oxide in-situ and in real-time. The technique allows for monitoring Bragg reflections and measuring X-ray growth oscillations with a time resolution of 1 min in a wide q-range in reciprocal space extending over 0.25–0.80 Å− 1, i.e. sampling a large number of Fourier components simultaneously.
A quantitative analysis of growth oscillations at several q-points yields the evolution of the surface roughness, showing a marked transition from layer-by-layer growth to strong roughening after four monolayers of pentacene have been deposited.
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A quantitative analysis of growth oscillations at several q-points yields the evolution of the surface roughness, showing a marked transition from layer-by-layer growth to strong roughening after four monolayers of pentacene have been deposited.
Download [PDF]