Institute of Functional Interfaces

Valence band electronic structure of V2O5 as determined by resonant soft X-ray emission spectroscopy

  • chair:

    Yu. Khyzhun, O. Yu. / Strunskus, T. / Grünert, W. / Wöll, Ch. (2005)

  • place: J. Electr. Spectrosc. 149 (2005), 45-50 (2005)

  • Date: 2005
  • Yu. Khyzhun, O. Yu. / Strunskus, T. / Grünert, W. / Wöll, Ch. (2005): „Valence band electronic structure of V2O5 as determined by resonant soft X-ray emission spectroscopy“. In: J. Electr. Spectrosc. 149 (2005), 45-50 (2005)

Abstract

Resonant soft X-ray emission (SXE) spectra have been measured for a series of excitation energies at the V Lα and O Kα bands of divanadium pentoxide, V2O5. In addition, a near-edge X-ray absorption fine structure (NEXAFS) spectrum at the V 2p and O 1s edges has been also recorded to aid the assignment of the features seen in the SXE data.

The V Lα SXE spectrum of V2O5 consists of two distinct components that can be assigned to the V 3deg-like states strongly hybridized with the O 2pσ-like states and to the V 3dt2g-like states weakly hybridized with the O 2pπ-like states.

The resonant SXE spectra recorded at photon energies close to the position of the V LIII edge revealed Raman-like features with an energy loss of 7 eV similar to charge transfer states previously observed by Schmitt et al. [T. Schmitt, L.-C. Duda, M. Matsubara, M. Mattesini, M. Klemm, A. Augustsson, J.-H. Guo, T. Uozumi, S. Horn, R. Ahuja, A. Kotani, J. Nordgren, Phys. Rev. B 69 (2004) 125103] for the V6O13 oxide.


 

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