Mechanism of Arsenic Monolayer Doping of Oxide-Free Si(111)

  • chair:

    Longo, R., C. / Mattson, E., C. / Vega, A. / Cabrera, W. / Cho, K. / Chabal, Y. J. / Thissen, P. (2016) 

  • place:

    Chem. Mater., (2016), 28, 7, 1975–1979, DOI:10.1021/acs.chemmater.5b04394 

  • Date: März 2016


Density scaling and subsequent device dimension reduction continue to drive significant advances in the materials processing and architecture of advanced electronic devices.(1) As gate lengths approach the sub-10 nm regime, junction doping has become an increasing concern due to its importance in controlling short channel effects.(2) Source/drain junction depths must be extremely shallow and abrupt, typically around 1/3 of the gate length.

(3) Moreover, the transition to nonplanar architectures requires innovative methods to conformally dope the semiconductor material with fine control and reproducibility.(4) Unfortunately, the conventional techniques for junction doping, such as ion implantation and anneal(5-7) or plasma doping,(8-10) cannot produce uniform and abrupt junctions shallower than 10 nm in depth, due to fundamental broadening of dopant distribution, random dopant fluctuations, and ion-induced damage.