Atomically precise semiconductor-graphene and hBN interfaces by Ge intercalation

  • chair:

    Verbitskiy, N. / Fedorov, A. / Profeta, G. / Stroppa, A. / Petaccia, L. / Senkovskiy, B. / Nevedov, A. / Wöll, C. / Usachov, D. / Vyalikh, D. / Yashina, L. / Eliseev, A. / Pichler, T. / Grüneis, A. (2015)

  • place:

    Sci Rep. (2015); 5: 17700

  • Date: Dezember 2015


The full exploration of the potential, which graphene offers to nanoelectronics requires its integration into semiconductor technology. So far the real-world applications are limited by the ability to concomitantly achieve large single-crystalline domains on dielectrics and semiconductors and to tailor the interfaces between them.

Here we show a new direct bottom-up method for the fabrication of high-quality atomically precise interfaces between 2D materials, like graphene and hexagonal boron nitride (hBN), and classical semiconductor via Ge intercalation. Using angle-resolved photoemission spectroscopy and complementary DFT modelling we observed for the first time that epitaxially grown graphene with the Ge monolayer underneath demonstrates Dirac Fermions unaffected by the substrate as well as an unperturbed electronic band structure of hBN.

This approach provides the intrinsic relativistic 2D electron gas towards integration in semiconductor technology. Hence, these new interfaces are a promising path for the integration of graphene and hBN into state-of-the-art semiconductor technology.