Institut für Funktionelle Grenzflächen (IFG)

Influence of contact metals on the erformance and morphology of pentacene bottom-contact field-effect transistors

  • Autor: Bock, C. / Pham, D. V. / Kunze, U. / Käfer, D. / Witte, G. / Wöll, C. (2008)

  • Quelle:

    Physica E 40 (2008), 2107-2109

  • Datum: 2008
  • Bock, C. / Pham, D. V. / Kunze, U. / Käfer, D. / Witte, G. / Wöll, C. (2008): „Influence of contact metals on the erformance and morphology of pentacene bottom-contact field-effect transistors“. In: Physica E 40 (2008), 2107-2109

Abstract

In pentacene-based bottom-contact field-effect transistors we study the influence of source and drain contact metals (gold, palladium, and platinum) on the morphology and transistor performance. Transistors prepared with Pd electrodes show a reduced contact and sheet resistance, a reduced activation energy, and a closer packed pentacene film in the channel region.


 

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