Interface Chemistry and Molecular Interactions of Phosphonic Acid Self-Assembled Monolayers on Oxyhydroxide-Covered Aluminum in Humid Environments
Maxisch, M. / Thissen, P. / Giza, M. / Grundmeier, G. (2011)
Langmuir 10 (2011), 27, 6042
- Date: 2011
Maxisch, M. / Thissen, P. / Giza, M. / Grundmeier, G. (2011): „Interface Chemistry and Molecular Interactions of Phosphonic Acid Self-Assembled Monolayers on Oxyhydroxide-Covered Aluminum in Humid Environments“. In: Langmuir 10 (2011), 27, 6042
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Barrier properties of self-assembled octadecylphosphonic acid (ODPA) monolayers on plasma-modified oxyhydroxide-covered aluminum surfaces were analyzed by means of in situ photoelastic modulated infrared reflection absorption spectroscopy (PM-IRRAS). The surface hydroxyl density prior to ODPA adsorption was increased by means of a low-temperature H(2)O-plasma treatment.
Adsorption isotherms of H(2)O on ODPA self-assembled monolayer (SAM) modified surfaces in comparison to bare oxide covered aluminum surfaces showed that the ODPA SAM leads to a strongly reduced amount of adsorbed water based on the inability of water to form hydrogen bonds to the low-energy aliphatic surface.
However, the ODPA SAM covered surfaces did not show a significant inhibition of the H(2)O/D(2)O isotope exchange reaction between the D(2)O gas phase and the hydroxyl groups of the aluminum oxyhydroxide film, as the interfacial layer between the ODPA SAM and the metal substrate, while the interfacial phosphonate group as well as the orientation of the SAM is not affected by the adsorption of water.
It can be followed that the strong adhesion promoting and high corrosion resistances of organophosphonate monolayers on oxyhydroxide-covered aluminum is a result of the strong acid-base interaction of the phosphonate headgroup with the Al ions in the oxyhydroxide film, even in the presence of high interfacial water activity and the molecular interactions of the aliphatic chains. However, the barrier effect of such monolayers on the transport of water is negligible.